mpn:
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MPN:
Description:
N-Channel 60 V 60A (Tc) 3.25W (Ta), 100W (Tc) Through Hole TO-220AB
Attributes
| Key ^ | Value |
|---|---|
| Base Product Number | SUP60 |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 60A (Tc) |
| Description | MOSFET N-CH 60V 60A TO220AB |
| Detailed Description | N-Channel 60 V 60A (Tc) 3.25W (Ta), 100W (Tc) Through Hole TO-220AB |
| Digi-Key Part Number | SUP60N06-12P-GE3-ND |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1970 pF @ 30 V |
| Manufacturer Product Number | SUP60N06-12P-GE3 |
| Manufacturer, Mfr | Vishay Siliconix |
| Mounting Type | Through Hole |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 3.25W (Ta), 100W (Tc) |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 10V |
| Series | TrenchFET? |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 4.5V @ 250?A |