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Description:
Buy SI3127DV-T1-GE3 VISHAY SILICONIX , Learn more about SI3127DV-T1-GE3 Trans MOSFET P-CH 60V 5.1A 6-Pin TSOP T/R, View the manufacturer, and stock, and datasheet pdf for the SI3127DV-T1-GE3 at Jotrin Electronics.
Attributes
| Key ^ | Value |
|---|---|
| Channel Mode | Enhancement |
| Configuration | Single |
| Fall Time | 16 ns |
| Id Continuous Drain Current | - 5.1 A |
| In-stock | 20000 |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Number of Channels | 1 Channel |
| Package/Case | TSOP-6 |
| Pd Power Dissipation | 4.2 W |
| Product Categories | Transistors - FETs, MOSFETs - Single |
| Qg Gate Charge | 20 nC |
| Rds On Drain Source Resistance | 146 mOhms |
| Rise Time | 6 ns |
| RoHs Status | Lead free/RoHS Compliant |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Typical Turn Off Delay Time | 35 ns |
| Typical Turn On Delay Time | 40 ns |
| Vds Drain Source Breakdown Voltage | - 60 V |
| Vgs Gate Source Voltage | +/- 20 V |
| Vgs th Gate Source Threshold Voltage | - 1 V |