Attributes

Key Value
Base Product NumberZXMP10
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3A (Ta)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .16.5 nC @ 10 V
Input Capacitance (Ciss.717 pF @ 50 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)2.15W (Ta)
Rds On (Max) @ Id, Vgs235mOhm @ 2.1A, 10V
Series-
Supplier Device PackageTO-252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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