Attributes

Key Value
@Ic (test) (A)10m
@VCE (V)10
CaseTO92
Derate Above 25?C12m
Forward Current Transfe.40
Ic Max. (A)300m
Icbo Max. @Vcb Max. (A)100n
ManufacturerDiscrete Semiconductor .
Max. hFE200
Max. Operating Junction.150 ?C
Max. PD (W)1.5
Maximum Collector Curre.0.5 A
Maximum Collector Power.0.625 W
Maximum Collector-Base .350 V
Maximum Collector-Emitt.400 V
Min hFE50
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-12
PolarityNPN
SKU313824
Surface Mounted Yes/NoNO
Tr Max. (s)600n
Transition Frequency (f.50 MHz
TypeTransistor Silicon NPN
Vbr CBO400
Vbr CEO350
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