Attributes

Key Value
Base Product NumberIRL2910
CategoryDiscrete Semiconductor .
Current - Continuous Dr.55A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .140 nC @ 5 V
Input Capacitance (Ciss.3700 pF @ 25 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)200W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs26mOhm @ 29A, 10V
SeriesHEXFET?
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2V @ 250?A
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