Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.160A (Tc)
Drain to Source Voltage.55 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .290 nC @ 10 V
Input Capacitance (Ciss.7960 pF @ 25 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)300W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs3.3mOhm @ 75A, 10V
SeriesHEXFET?
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250?A
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