Attributes

Key Value
@Ic (A)7.0m
@VCE (test) (V)10
C(ob) (F)280f
CaseTO92
Collector Capacitance (.0.4 pF
Derate (Amb) (W/?C)2.9m
Forward Current Transfe.30
hfe30
Ic Max. (A)50m
Icbo Max. @Vcb Max. (A)100n
ManufacturerMotorola Semiconductor
Max. Operating Junction.150 ?C
Max. PD (W)350m
Maximum Collector Curre.0.05 A
Maximum Collector Power.0.036 W
Maximum Collector-Base .45 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.4 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-14
PolarityNPN
SKU87082
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.300M
Transition Frequency (f.300 MHz
TypeTransistor Silicon NPN
Vbr CBO45
Vbr CEO30
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev