Attributes

Key Value
@Ic (test) (A)30m
@VCE (V)10
CaseTO202
Collector Capacitance (.2.2 pF
Derate Above 25?C80m
Forward Current Transfe.40
Ic Max. (A)500m
Icbo Max. @Vcb Max. (A)50n
ManufacturerMotorola Semiconductor
Max. Operating Junction.150 ?C
Max. PD (W)1.0
Maximum Collector Curre.1 A
Maximum Collector Power.1 W
Maximum Collector-Base .250 V
Maximum Collector-Emitt.250 V
Maximum Emitter-Base Vo.8 V
Min hFE25
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-12
PolarityNPN
R(sat) (?)25
SKU85456
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.90M
Transition Frequency (f.60 MHz
TypeTransistor Silicon NPN
Vbr CBO250
Vbr CEO250
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