Attributes

Key Value
@Ic (A)1.0m
@VCE (test) (V)10
CaseTO92
Collector Capacitance (.1.6 pF
Derate (Amb) (W/?C)5.0m
Forward Current Transfe.25
hfe40
Ic Max. (A)500m
Icbo Max. @Vcb Max. (A)100n
ManufacturerMotorola Semiconductor
Max. Operating Junction.150 ?C
Max. PD (W)625m
Maximum Collector Curre.0.5 A
Maximum Collector Power.0.625 W
Maximum Collector-Base .200 V
Maximum Collector-Emitt.200 V
Maximum Emitter-Base Vo.6 V
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityPNP
SKU86340
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.50M
Transition Frequency (f.50 MHz
TypeTransistor Silicon PNP
Vbr CBO200
Vbr CEO200
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