Attributes

Key Value
@Ic (test) (A)25m
@VCE (V)20
CaseTO202
Collector Capacitance (.2 pF
Derate Above 25?C40m
Forward Current Transfe.50
Ic Max. (A)100m
Icbo Max. @Vcb Max. (A)10n
ManufacturerNXP Semiconductors
Max. Operating Junction.150 ?C
Max. PD (W)1.6
Maximum Collector Curre.0.1 A
Maximum Collector Power.1.6 W
Maximum Collector-Base .250 V
Maximum Collector-Emitt.250 V
Maximum Emitter-Base Vo.5 V
Min hFE50
Oper. Temp (?C) Max.140
Pinout Equivalence Numb.3-10
PolarityNPN
SKU86848
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.60M
Transition Frequency (f.60 MHz
TypeTransistor Silicon NPN
Vbr CBO250
Vbr CEO250
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