Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.82nC @ 10V
Drive Voltage (Max Rds .104mOhm @ 18.5A, 10V
FET Feature357W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .4.165pF @ 380V
MfrON Semiconductor
Mounting TypeTO-247-3
Operating TemperatureThrough Hole
PackageActive
Package / Case600V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs3.5V @ 250?A
SeriesBulk
Supplier Device PackageTO-247-3
Technology37A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?20V
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