ON Semiconductor NTD23N03R-1G

mpnNTD23N03R-1G
brandname: ON Semiconductor
manufacturername: ON Semiconductor

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	3.8A (Ta), 17.1A (Tc)
Drain to Source Voltage.	25 V
Drive Voltage (Max Rds .	4V, 5V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	3.76 nC @ 4.5 V
Input Capacitance (Ciss.	225 pF @ 20 V
Mfr	ON Semiconductor
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-251-3 Short Leads, I.
Part Status	Obsolete
Power Dissipation (Max)	1.14W (Ta), 22.3W (Tc)
Rds On (Max) @ Id, Vgs	45mOhm @ 6A, 10V
Series	-
Supplier Device Package	I-PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2V @ 250?A