Attributes

Key Value
Base Product NumberR6012
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Ta)
DescriptionMOSFET N-CH 600V 12A TO.
Detailed DescriptionN-Channel 600 V 12A (Ta.
Digi-Key Part NumberR6012ANX-ND
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .35 nC @ 10 V
Input Capacitance (Ciss.1300 pF @ 25 V
ManufacturerRohm Semiconductor
Manufacturer Product Nu.R6012ANX
MfrRohm Semiconductor
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageBulk
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)50W (Tc)
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs420mOhm @ 6A, 10V
Series-
Supplier Device PackageTO-220FM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 1mA
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