Infineon Technologies IPI80N04S4L04AKSA1

mpnIPI80N04S4L04AKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	80A (Tc)
Drain to Source Voltage.	40V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	60nC @ 10V
Input Capacitance (Ciss.	4.69pF @ 25V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-262-3 Long Leads, I?.
Part Status	Obsolete
Power Dissipation (Max)	71W (Tc)
Rds On (Max) @ Id, Vgs	4.3mOhm @ 80A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -16V
Vgs(th) (Max) @ Id	2.2V @ 35?A