Infineon Technologies IRF3711SPBF

mpnIRF3711SPBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	110A (Tc)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	44 nC @ 4.5 V
Input Capacitance (Ciss.	2980 pF @ 10 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-263-3, D?Pak (2 Lead.
Part Status	Obsolete
Power Dissipation (Max)	3.1W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs	6mOhm @ 15A, 10V
Series	HEXFET?
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3V @ 250?A