IXYS IXFH36N60X3

mpnIXFH36N60X3
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	36A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	29 nC @ 10 V
Input Capacitance (Ciss.	2030 pF @ 25 V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	446W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	90mOhm @ 18A, 10V
Series	HiPerFET?, Ultra X3
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 2.5mA