Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.66A (Tc)
Drain to Source Voltage.16V
Drive Voltage (Max Rds .2.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .7.2nC @ 4.5V
Input Capacitance (Ciss.528pF @ 12.8V
MfrNexperia USA Inc.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm.
Part StatusObsolete
Power Dissipation (Max)5W (Tc)
Rds On (Max) @ Id, Vgs120mOhm @ 1A, 4.5V
Series-
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id600mV @ 1mA
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