Attributes

Key Value
Base Product NumberSTB33
CategoryDiscrete Semiconductor .
Current - Continuous Dr.24A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .41.5 nC @ 10 V
Input Capacitance (Ciss.1790 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)190W (Tc)
Rds On (Max) @ Id, Vgs140mOhm @ 12A, 10V
SeriesMDmesh? M2
Supplier Device PackageD?PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id4V @ 250?A
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