IRF620PBF.-VISHAY

mpnIRF620PBF
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

VISHAY SILICONIX IRF620PBF N CHANNEL MOSFET, 200V, 5.2A TO-220 (1 piece)

PartNumber: IRF620PBF.-VISHAY
Model: IRF620PBF.-VISHAY
PackageQuantity: 1
Binding: Electronics
Manufacturer: VISHAY SILICONIX
Label: VISHAY SILICONIX

Attributes

Key	Value
Base Product Number	IRF620
Category	Discrete Semiconductor .
Channel Type	N
Circuit Type	N-Channel
Configuration	Single
Current - Continuous Dr.	5.2A (Tc)
Description	MOSFET N-CH 200V 5.2A T.
Detailed Description	N-Channel 200 V 5.2A (T.
Digi-Key Part Number	IRF620PBF-ND
Dimensions	10.51 x 4.65 x 15.49 mm
Drain Current	5.2 A
Drain Current Id(rms)	5.2 A
Drain Source Voltage Vds	200 VDC
Drain to Source On Resi.	0.8 Ohms
Drain to Source Voltage	200 V
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	10V
Drive Voltage (Max Rds .	10V
Fall Time tf	13 ns
Family Series	Vishay Transistors, TO-.
FET Feature	-
FET Type	N-Channel
Forward Transconductance	1.5 S
Forward Voltage, Diode	1.8 V
Gate Charge (Qg) (Max) .	14 nC @ 10 V
Gate Leakage Current	0.1 ?A
Gate Source Voltage Vgss	20 VDC
Gate to Source Voltage	?20 V
Gross Weight	0 lbs
Height	0.61" (15.49mm)
Input Capacitance	260 pF @ 25 V
Input Capacitance (Ciss.	260 pF @ 25 V
Item Number	IRF620PBF
Length	0.413 in
Manufacturer	Vishay Siliconix, Vishay
Manufacturer Part Number	IRF620PBF
Manufacturer Product Nu.	IRF620PBF
Manufacturer Standard L.	17 Weeks
Maximum Operating Tempe.	+150 ?C
Mfr	Vishay Siliconix
Minimum Operating Tempe.	-55 ?C
Mounting Type	Through Hole
Net Weight	0 lbs
Number of Elements per .	1
Number of Pins	3
Operating Temperature	-55?C ~ 150?C (TJ)
Package	TO-220AB, Tube
Package / Case	TO-220-3
Package Type	TO-220AB
Part Status	-
Polarization	N-Channel
Power Dissipation	50 W
Power Dissipation (Max)	50W (Tc)
Product Header	Hexfet? Power MOSFET
Product Series	TO-220
Product Status	Active
Rds On (Max) @ Id, Vgs	800mOhm @ 3.1A, 10V
rDS(on)	800 mOhm
Rise Time tr	22 ns
RoHS	Yes
Series	IRF Series, -
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Temperature Operating R.	-55 to +150 ?C
Total Gate Charge	14 nC
Trr	150 ns
Turn Off Delay Time	19 ns
Turn On Delay Time	7.2 ns
Typ. Vgs(th)	3 VDC
Typical Gate Charge @ V.	Maximum of 14 nC @ 10 V
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A
Voltage, Breakdown, Dra.	200 V
Width	0 in

All Prices

Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Preferred Tier
Win Source	IRF620PBF	0.37	70	1985		Vishay	0.37 @ 100
Galco	IRF620PBF-VISH	0.5	1000	100		Vishay	0.5 @ 1000
Hotenda	H1810105	0.6072	1	100		Vishay/Siliconix	0.6072 @ 100
Future Electronics	4070561	0.744	1	6428		Vishay	0.744 @ 100
Newark	38K2812	0.757	1	100		VISHAY	0.757 @ 100
us.rs-online.com	70078853	0.8	1	100		Vishay PCS	0.8 @ 100
Digi-Key	811694	0.98208	1	490		Vishay Siliconix	0.98208 @ 100
RS Delivers	543-0052	1.224	1	100		Vishay	1.224 @ 100
AmazonTP	B00LWL0ZEW	15.03	1	100	2	Vishay / Siliconix	15.03 @ 100