Attributes

Key Value
Base Product NumberSI4434
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.8A (Ta), 4.1A (Tc)
Drain to Source Voltage.250 V
Drive Voltage (Max Rds .7.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .16.5 nC @ 10 V
Input Capacitance (Ciss.600 pF @ 125 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm .
Power Dissipation (Max)2.9W (Ta), 6W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs150mOhm @ 2.8A, 10V
SeriesThunderFET?
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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