Attributes

Key Value
Base Product NumberIPB320
CategoryDiscrete Semiconductor .
Current - Continuous Dr.34A (Tc)
DescriptionMOSFET N-CH 200V 34A D2.
Detailed DescriptionN-Channel 200 V 34A (Tc.
Digi-Key Part NumberIPB320N20N3GATMA1TR-ND .
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .29 nC @ 10 V
Input Capacitance (Ciss.2350 pF @ 100 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPB320N20N3GATMA1
Manufacturer Standard L.36 Weeks
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)136W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs32mOhm @ 34A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO263-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 90?A
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