Attributes

Key Value
Base Product NumberIPL65R
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10.1A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .39 nC @ 10 V
Input Capacitance (Ciss.710 pF @ 100 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case4-PowerTSFN
Power Dissipation (Max)83W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs420mOhm @ 3.4A, 10V
SeriesCoolMOS? E6
Supplier Device PackagePG-VSON-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 300?A
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