Infineon Technologies IPTG054N15NM5ATMA1

mpnIPTG054N15NM5ATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	17.5A (Ta), 143A (Tc)
Drain to Source Voltage.	150 V
Drive Voltage (Max Rds .	8V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	73 nC @ 10 V
Input Capacitance (Ciss.	5700 pF @ 75 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerSFN
Power Dissipation (Max)	3.8W (Ta), 250W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	5.4mOhm @ 50A, 10V
Series	OptiMOS? 5
Supplier Device Package	PG-HSOG-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.6V @ 191?A