Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2A (Ta)
Drain to Source Voltage.1500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .37.5 nC @ 10 V
Input Capacitance (Ciss.380 pF @ 30 V
MfrON Semiconductor
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Part StatusNot For New Designs
Power Dissipation (Max)2.5W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs13Ohm @ 1A, 10V
Series-
Supplier Device PackageTO-3P-3L
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id-
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