Vishay Siliconix SI2302DDS-T1-GE3

mpnSI2302DDS-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SI2302
Category	Discrete Semiconductor .
Current - Continuous Dr.	2.9A (Tj)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	2.5V, 4.5V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	5.5 nC @ 4.5 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23.
Power Dissipation (Max)	710mW (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	57mOhm @ 3.6A, 4.5V
Series	TrenchFET?
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?8V
Vgs(th) (Max) @ Id	850mV @ 250?A