Harris Corporation RF1S9530

mpnRF1S9530
brandname: Harris Corporation
manufacturername: Harris Corporation

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	12A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	45 nC @ 10 V
Input Capacitance (Ciss.	500 pF @ 25 V
Mfr	Harris Corporation
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Bulk
Package / Case	TO-262-3 Long Leads, I?.
Power Dissipation (Max)	75W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	300mOhm @ 6.5A, 10V
Series	-
Supplier Device Package	I2PAK (TO-262)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A