Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.33A (Tc)
Drain to Source Voltage.40V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .38nC @ 10V
Input Capacitance (Ciss.860pF @ 25V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusObsolete
Power Dissipation (Max)40W (Tc)
Rds On (Max) @ Id, Vgs19mOhm @ 15A, 10V
Series-
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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