Attributes

Key Value
Base Product NumberIRF530
CategoryDiscrete Semiconductor .
Current - Continuous Dr.14A (Tc)
DescriptionMOSFET N-CH 100V 14A TO.
Detailed DescriptionN-Channel 100 V 14A (Tc.
Digi-Key Part NumberIRF530PBF-ND
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .26 nC @ 10 V
Input Capacitance (Ciss.670 pF @ 25 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.IRF530PBF
Manufacturer Standard L.17 Weeks
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)88W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs160mOhm @ 8.4A, 10V
Series-
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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