SI2333DDS-T1-GE3-VISHAY

B00M2E5EDA

VISHAY SILICONIX SI2333DDS-T1-GE3 MOSFET, P-CH, 12V, SOT23 (1 piece)

VISHAY SILICONIX SI2333DDS-T1-GE3 MOSFET, P-CH, 12V, SOT23 (1 piece)zoom

Attributes

Key Value
Base Product NumberSI2333
CaseSOT23
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6A (Tc)
Drain current-5.2A
Drain to Source Voltage.12 V
Drain-source voltage-12V
Drive Voltage (Max Rds .1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate charge35nC
Gate Charge (Qg) (Max) .35 nC @ 8 V
Gate-source voltage?8V
Input Capacitance (Ciss.1275 pF @ 6 V
Kind of channelenhanced
Kind of packagereel,
ManufacturerVISHAY
MfrVishay Siliconix
MountingSMD
Mounting TypeSurface Mount
On-state resistance150m?
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Polarisationunipolar
Power dissipation1.1W
Power Dissipation (Max)1.2W (Ta), 1.7W (Tc)
Product StatusActive
Pulsed drain current-20A
Rds On (Max) @ Id, Vgs28mOhm @ 5A, 4.5V
SeriesTrenchFET?, SI23 Series
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Type of transistorP-MOSFET
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18069420.1402816000Vishay/Siliconix0.14028 @ 1
us.rs-online.com704595090.252643000395Siliconix / Vishay0.25264 @ 3000
Future Electronics70908340.27196000Vishay0.27 @ 1
thumbzoomTMESI2333DDS-T1-GE30.2883347VISHAY0.288 @ 3
thumbzoomNewark62W05640.431517775VISHAY0.431 @ 1
RS Delivers787-9222P0.43321395Vishay0.4332 @ 1
Digi-Key36799720.5281395Vishay Siliconix0.528 @ 1
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