Attributes

Key Value
Base Product NumberSQ3419
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6.9A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .11.3 nC @ 4.5 V
Input Capacitance (Ciss.990 pF @ 20 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Part StatusActive
Power Dissipation (Max)5W (Tc)
Rds On (Max) @ Id, Vgs58mOhm @ 2.5A, 10V
SeriesAutomotive, AEC-Q101, T.
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
prev