mpn
RFL1N12
brand
name: Harris Corporation
manufacturer
name: Harris Corporation
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
1A (Tc)
Drain to Source Voltage.
120 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss.
200 pF @ 25 V
Mfr
Harris Corporation
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Bulk
Package / Case
TO-205AF Metal Can
Part Status
Active
Power Dissipation (Max)
8.33W (Tc)
Rds On (Max) @ Id, Vgs
1.9Ohm @ 1A, 10V
Series
-
Supplier Device Package
TO-205AF (TO-39)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
4V @ 250?A