Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1A (Tc)
Drain to Source Voltage.120 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss.200 pF @ 25 V
MfrHarris Corporation
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-205AF Metal Can
Part StatusActive
Power Dissipation (Max)8.33W (Tc)
Rds On (Max) @ Id, Vgs1.9Ohm @ 1A, 10V
Series-
Supplier Device PackageTO-205AF (TO-39)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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