Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6.8A (Tc)
Drain to Source Voltage.800V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .91nC @ 10V
Input Capacitance (Ciss.2.32pF @ 100V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-40?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusObsolete
Power Dissipation (Max)35W (Tc)
Rds On (Max) @ Id, Vgs310mOhm @ 11A, 10V
SeriesCoolMOS? CE
Supplier Device PackagePG-TO220 Full Pack
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.9V @ 1mA
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