Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.30A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .11.4 nC @ 5 V
Input Capacitance (Ciss.1300 pF @ 20 V
MfrEPC Space, LLC
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
Package / Case4-SMD, No Lead
Power Dissipation (Max)-
Product StatusActive
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 5V
Seriese-GaN?
Supplier Device Package4-SMD
TechnologyGaNFET (Gallium Nitride)
Vgs (Max)+6V, -4V
Vgs(th) (Max) @ Id2.5V @ 9mA
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