Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.82A (Tc)
Drain to Source Voltage.40 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .150 nC @ 10 V
Input Capacitance (Ciss.9 pF @ 25 V
MfrRenesas Electronics Ame.
Mounting TypeThrough Hole
Operating Temperature175?C (TJ)
PackageTube
Package / CaseTO-262-3 Full Pack, I?P.
Power Dissipation (Max)1.8W (Ta), 143W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.2mOhm @ 41A, 10V
Series-
Supplier Device PackageTO-262-3
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250?A
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