Attributes

Key Value
Base Product NumberRTQ030
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .9 nC @ 4.5 V
Input Capacitance (Ciss.800 pF @ 10 V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Part StatusActive
Power Dissipation (Max)1.25W (Ta)
Rds On (Max) @ Id, Vgs80mOhm @ 3A, 4.5V
Series-
Supplier Device PackageTSMT6 (SC-95)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id2V @ 1mA
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