Toshiba Semiconductor and Storage TK90S06N1L,LQ

mpnTK90S06N1L,LQ
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TK90S06
Category	Discrete Semiconductor .
Current - Continuous Dr.	90A (Ta)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	81 nC @ 10 V
Input Capacitance (Ciss.	5400 pF @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Power Dissipation (Max)	157W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	3.3mOhm @ 45A, 10V
Series	U-MOSVIII-H
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 500?A