Attributes

Key Value
Base Product NumberSI7117
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.17A (Tc)
Drain to Source Voltage.150 V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .12 nC @ 10 V
Input Capacitance (Ciss.510 pF @ 25 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? 1212-8
Power Dissipation (Max)3.2W (Ta), 12.5W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs1.2Ohm @ 500mA, 10V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? 1212-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A
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