Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A
Drain to Source Voltage.1200V (1.2kV)
FET FeatureStandard
FET Type2 N-Channel (Half Bridg.
Gate Charge (Qg) (Max) .600nC @ 10V
Input Capacitance (Ciss.15200pF @ 25V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP6
Part StatusActive
Power - Max1250W
Rds On (Max) @ Id, Vgs240mOhm @ 25A, 10V
Series-
Supplier Device PackageSP6
Vgs(th) (Max) @ Id5V @ 6mA
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