Attributes

Key Value
@Ic (A)1.0m
@VCE (test) (V)10
C(ob) (F)1.7p
CaseTO92
Collector Capacitance (.0.1 pF
Derate (Amb) (W/?C)2.8m
Forward Current Transfe.70
hfe70
Ic Max. (A)50m
Icbo Max. @Vcb Max. (A)100n
ManufacturerNational Semiconductor .
Max. Operating Junction.135 ?C
Max. PD (W)310m
Maximum Collector Curre.0.05 A
Maximum Collector Power.0.31 W
Maximum Collector-Base .30 V
Maximum Collector-Emitt.20 V
Maximum Emitter-Base Vo.4 V
Oper. Temp (?C) Max.135
Pinout Equivalence Numb.3-12
PolarityNPN
SKU313789
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.400M
Transition Frequency (f.400 MHz
TypeTransistor Silicon NPN
Vbr CBO30
Vbr CEO20
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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