Attributes

Key Value
@Ic (test) (A)25m
@VCE (V)20i
CaseTO126
Collector Capacitance (.1.8 pF
Derate Above 25?C50m
Forward Current Transfe.50
Ic Max. (A)100m
ManufacturerNXP Semiconductors
Max. Operating Junction.150 ?C
Max. PD (W)2.0
Maximum Collector Curre.0.1 A
Maximum Collector Power.2 W
Maximum Collector-Base .300 V
Maximum Collector-Emitt.300 V
Maximum Emitter-Base Vo.5 V
Min hFE50
Oper. Temp (?C) Max.140
Pinout Equivalence Numb.3-10
PolarityNPN
R(sat) (?)400
SKU79886
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.60M
Transition Frequency (f.60 MHz
TypeTransistor Silicon NPN
Vbr CBO300
Vbr CEO300
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