Attributes

Key Value
@Ic (test) (A)25m
@VCE (V)15
CaseTO126
Collector Capacitance (.4.5 pF
Derate (Amb) (W/?C)10m
Forward Current Transfe.25
Ic Max. (A)200m
Icbo Max. @Vcb Max. (A)50n
ManufacturerST Microelectronics - S.
Max. Operating Junction.150 ?C
Max. PD (W)1.2
Maximum Collector Curre.0.2 A
Maximum Collector Power.1.25 W
Maximum Collector-Base .250 V
Maximum Collector-Emitt.250 V
Maximum Emitter-Base Vo.5 V
Min hFE30
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-10
PolarityPNP
SKU86337
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.70M
Transition Frequency (f.50 MHz
TypeTransistor Silicon PNP
Vbr CBO250
Vbr CEO250
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