Attributes

Key Value
@Ic (A)1.0m
@VCE (test) (V)10
C(ob) (F)600f
CaseTO92
Collector Capacitance (.0.6 pF
Derate (Amb) (W/?C)2.8m
Forward Current Transfe.70
hfe70
Ic Max. (A)100m
Icbo Max. @Vcb Max. (A)100n
ManufacturerMotorola Semiconductor
Max. Operating Junction.150 ?C
Max. PD (W)350m
Maximum Collector Curre.0.1 A
Maximum Collector Power.0.35 W
Maximum Collector-Base .30 V
Maximum Collector-Emitt.25 V
Maximum Emitter-Base Vo.3 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-14
PolarityNPN
SKU372365
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.400M
Transition Frequency (f.400 MHz
TypeTransistor Silicon NPN
Vbr CBO30
Vbr CEO25
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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