Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.120A (Tc)
Drain to Source Voltage.40V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .135nC @ 10V
Input Capacitance (Ciss.4730pF @ 25V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)208W (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 100A, 10V
SeriesHEXFET?, StrongIRFET?
Supplier Device PackageTO-263 (D?Pak)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.9V @ 100?A
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