Attributes

Key Value
Base Product NumberIRFR1
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8.4A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .15 nC @ 10 V
Input Capacitance (Ciss.350 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)50W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs270mOhm @ 5.9A, 10V
Series-
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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