Attributes

Key Value
@Ic (A)1.0m
@VCE (test) (V)6.0
C(ob) (F)8.0p
CaseTO1
Collector Capacitance (.12 pF
Derate (Amb) (W/?C)2.5m
Forward Current Transfe.40
hfe40
Ic Max. (A)100m
Icbo Max. @Vcb Max. (A)10u
ManufacturerMotorola Semiconductor
Max. Operating Junction.85 ?C
Max. PD (W)150m
Maximum Collector Curre.0.1 A
Maximum Collector Power.0.15 W
Maximum Collector-Base .18 V
Maximum Collector-Emitt.12 V
Maximum Emitter-Base Vo.12 V
Oper. Temp (?C) Max.100
Pinout Equivalence Numb.3-12
PolarityPNP
SKU314064
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.7.0M
Transition Frequency (f.3 MHz
TypeTransistor Germanium P.
Vbr CBO18
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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