Attributes

Key Value
Base Product NumberFQA55
CategoryDiscrete Semiconductor .
Current - Continuous Dr.55A (Tc)
Drain to Source Voltage.250 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .180 nC @ 10 V
Input Capacitance (Ciss.6250 pF @ 25 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Power Dissipation (Max)310W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs40mOhm @ 27.5A, 10V
SeriesQFET?
Supplier Device PackageTO-3PN
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759608636.3232