Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.8A (Tc)
Drain to Source Voltage.800V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .15nC @ 10V
Input Capacitance (Ciss.550pF @ 25V
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, I.
Part StatusObsolete
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs6.3Ohm @ 900mA, 10V
SeriesQFET?
Supplier Device PackageI-PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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