Attributes

Key Value
@Ic (test) (A)10
@VCE (V)10
CaseTO39
Collector Capacitance (.15 pF
Derate (Amb) (W/?C)28m
Forward Current Transfe.20
Ic Max. (A)1.0
Icbo Max. @Vcb Max. (A)1.0u
ManufacturerHarris Semiconductor
Max. Operating Junction.200 ?C
Max. PD (W)1.0
Maximum Collector Curre.1 A
Maximum Collector Power.1 W
Maximum Collector-Base .150 V
Maximum Collector-Emitt.100 V
Maximum Emitter-Base Vo.4 V
Min hFE20
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityPNP
R(sat) (?)60m
SKU136782
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.25M
Transition Frequency (f.25 MHz
TypeTransistor Silicon PNP
Vbr CBO150
Vbr CEO100
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