Infineon BSC252N10NSFGATMA1

B08X18WYMD

Infineon Mosfet, N Channel, 100V, 40A, Pg-Tsdson - BSC252N10NSFGATMA1

Infineon Mosfet, N Channel, 100V, 40A, Pg-Tsdson - BSC252N10NSFGATMA1zoom

Attributes

Key Value
Base Product NumberBSC252
CategoryDiscrete Semiconductor .
Current - Continuous Dr.7.2A (Ta), 40A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .17 nC @ 10 V
Input Capacitance (Ciss.1100 pF @ 50 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power Dissipation (Max)78W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs25.2mOhm @ 20A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 43?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics50602080.5045000100Infineon0.504 @ 5000
thumbzoomNewark60R25210.8361100INFINEON0.836 @ 100
Digi-Key20806531.268911100Infineon Technologies1.26891 @ 100
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