Attributes

Key Value
@Ic (test) (A)30m
@VCE (V)10
CaseTO39
Collector Capacitance (.3.5 pF
Derate (Amb) (W/?C)28m
Forward Current Transfe.20
Ic Max. (A)1.0
Icbo Max. @Vcb Max. (A)100u
ManufacturerHarris Semiconductor
Max. Operating Junction.200 ?C
Max. PD (W)1.0
Maximum Collector Curre.1 A
Maximum Collector Power.1 W
Maximum Collector-Base .200 V
Maximum Collector-Emitt.150 V
Maximum Emitter-Base Vo.5 V
Min hFE25
Oper. Temp (?C) Max.175
Pinout Equivalence Numb.3-12
PolarityPNP
R(sat) (?)100m
SKU116796
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.25M
Transition Frequency (f.25 MHz
TypeTransistor Silicon PNP
Vbr CBO200
Vbr CEO150
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